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Fractilia Academy!
This site contains information relating to the science of stochastics and how best to measure its effects in semiconductor fabrication.
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Technology Training: The Science of Stochastics
Modules:
Conference Presentations
BKM’S & Technical Papers
Best Known Methods (BKM’s)
Technical Papers
Evaluating the probabilistic process window for use in high volume manufacturing (SPIE 2024) Tsu-Wen Huang, et. al.
Modeling edge placement error performance of EUV and multipatterning processes (SPIE 2024) Chris A. Mack, Gurpreet Singh and Florian Gstrein
Simulating SEM imaging of via bottoms (SPIE 2024) Benjamin Bunday, Chris A. Mack, et. al.
Improvements in the measurement of local critical dimension uniformity (LCDU) for holes and pillars (EUVL Symposium 2023) Chris A. Mack, Christie Delvaux, Danilo De Simone and Gian F. Lorusso
Advances in Edge Placement Error Metrology in the Era of Stochastics (EUVL Symposium 2023) Michael Adel and Chris A. Mack
Overlay and Edge Placement Error Metrology in the Era of Stochastics (SPIE 2023) Chris A. Mack and Michael Adel
MOx resist formulation, chemistry, and processing impacts on the power spectral density of line-edge roughness (SPIE 2023) Amrit Narasimhan , et. al.
Patterning of Sub-20nm Tip-To-Tip Spacing with 0.33NA EUV Single Exposure of Pitch <30nm Line/Space Features Using Dry Resist (SPIE 2022) Nader Shamma, et. al.
Probabilistic Process Window: A new approach to focus-exposure analysis (SPIE 2022) Chris A. Mack, et. al.
Unbiased Roughness Measurements from Low Signal-to-Noise Ratio SEM Images (SPIE 2022) Chris A. Mack, et. al.
Spatial Frequency Analysis of LER and LWR to Tune SADP Process (SPIE 2022) Paper Poster
Jason Yang, et al.
Diagnosing and Removing CD-SEM Metrology Artifacts (SPIE 2021) Chris A. Mack, Gian Lorusso, Christie Delvaux
Measuring and Analyzing Contact Hole Variations in EUV Lithography (SPIE 2021) Joren Severi, Gian Lorusso, Danilo Di Simone, Chris A. Mack
Pattern roughness analysis using power spectral density: application and impact in photoresist formulation (JM3 2021) Charlotte Cutler, et. al.
Using MetroLER to diagnose and remove CD SEM metrology artifacts (imec PTW 2020) Chris A. Mack, GIan Lorusso, Christie Delvaux
Characterizing Variation in EUV Contact Hole Lithography (EUVL Symposium 2020) Chris A. Mack, et. al.
Fundamental characterization of stochastic variation for improved single-expose extreme ultraviolet patterning at aggressive pitch (JM3 2020) Jennifer Church, et. al.
Comparing Edge Detection Algorithms: their impact on unbiased roughness measurement precision and accuracy (SPIE 2020)
Chris A. Mack
Metrics for stochastic scaling in EUV lithography (EUVL Symposium 2019)
Chris A. Mack
Comparing Stochalis and MetroLER (imec PTW 2019)
Chris A. Mack, Peter De Bisschop
Unbiased roughness measurements: subtracting out SEM effects, Part 3 (SPIE 2019)
Chris A. Mack, Frieda Van Roey, Gian F. Lorusso
Benchmarking of EUV lithography line/space patterning versus immersion lithography multipatterning schemes at equivalent pitch (EUVL Symposium 2018)
Angelique Raley, et al.
Unbiased roughness measurements: subtracting out SEM effects, part 2 (EIPBN 2018)
Gian F. Lorusso, Vito Rutigliani, Frieda Van Roey, Chris A. Mack
Need for LWR metrology standardization: The imec roughness protocol (JM3 2018)
Gian F. Lorusso, et al.
Unbiased roughness measurements: the key to better etch performance (SPIE 2018) Paper Presentation
Andrew Liang, et al.
Setting up a proper Power Spectral Density (PSD) and Autocorrelation Analysis for Material and Process Characterization (SPIE 2018)
Vito Rutigliani, et al.
Roughness power spectral density as a function of resist parameters and its impact through process (SPIE 2018)
Charlotte Cutler, et al.
Unbiased roughness measurements: subtracting out SEM effects (MNE 2017)
Gian F. Lorusso, Vito Rutigliani, Frieda Van Roey, Chris A. Mack
Reducing roughness in EUV lithography (EUVL Symposium 2017)
Chris A. Mack
More on stochastics and the phenomenon of line-edge roughness (Photopolymer 2017)
Chris A. Mack
Stochastics and the phenomenon of line-edge roughness (SPIE 2017)
Chris A. Mack
Using the analytical linescan model for SEM metrology (SPIE 2017)
Chris A. Mack, Benjamin D. Bunday
Global minimization line-edge roughness analysis of top down SEM images (SPIE 2017)
Barton G. Lane, Chris A. Mack, Nasim Eibagi, Peter Ventzekn
Level crossing methodology applied to line-edge roughness characterization (SPIE 2017)
Chris A. Mack, Timothy A. Brunner, Xuemei Chen, Lei Sun
Impact of stochastic process variations on overlay mark fidelity towards the 5nm node (SPIE 2017)
Michael E. Adel, Roel Gronheid, Chris A. Mack, et al.